Analyzing Current-Voltage Curves for W-Si and W-GaAs Diodes
School
University of Colorado, Boulder**We aren't endorsed by this school
Course
APPM 3310
Subject
Electrical Engineering
Date
Dec 10, 2024
Pages
5
Uploaded by A55ssaad
Use the current vs. voltage curves for W-Si and W-GaAs diodes (From S. M. Sze, Physics of Semiconductor Devices, Wiley, 2007.) to answer questions below.Consider the tungsten-silicon curve for a Schottky diode below and assume a barrier height of 0.67 eV and that kbT=0.0259kbT=0.0259eVeV. Find A* at a temperature of 300K (AK2cm2)(K2cm2A).Status: [object Object]0 / 1 pointNo answerIncorrectThe answer you gave is not a number.2.Question 2You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3.
For the case where the silicon is intrinisic, write an expression for EiEi, the intrinsic Fermi level. Your answer can be written in terms of:E_f, the Fermi level of the semiconductorh, Planck's constantnu, frequencyq, charge You do not have to use all the variables.Status: [object Object]0 / 1 pointPreview will appear here...No answerIncorrect3.Question 3You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3.Solve for Ef–EvEf–Ev, knowing that Eg=1.1Eg=1.1eVeVin the case of doped silicon (NA=5×1017/cm3NA=5×1017/cm3at T = 300K). . Your answer should be in eV. For silicon, Nv=2.8×1019/cm3Nv=2.8×1019/cm3and Nc=1.04×1019/cm3Nc=1.04×1019/cm3. Your answer should be in eV.Status: [object Object]0 / 1 pointNo answerIncorrectThe answer you gave is not a number.4.Question 4You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3.Write an analytic expression to make the surface intrinsic p=nip=niin terms of the following variables:N_v E_f, the Fermi level for holesE_v, the valence band energyk_b, Boltzmann constantT, temperature
Status: [object Object]0 / 1 pointPreview will appear here...No answerIncorrect5.Question 5You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3.Evaluate expression for Ef−EvEf−Evfor the intrinsic case (p=nip=ni). Your answer should be in eV.Status: [object Object]0 / 1 pointNo answerIncorrectThe answer you gave is not a number.6.Question 6You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3.Estimate applied voltage to make semiconductor intrinsic. HINT: to check your answer, think about what regime you are driving the semiconductor towards and what that polarity of voltage should be.Status: [object Object]0 / 1 pointNo answerIncorrectThe answer you gave is not a number.7.Question 7You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3, kbT=0.0259kbT=0.0259eVeV, and the charge on the electron is 1.6×10−191.6×10−19CC.
You want to bring about a strong depletion, where n=10×nin=10×ni. Solve for Ef–EiEf–Eiin eV. Do not enter units, just the number (4 sig figs).Status: [object Object]0 / 1 pointNo answerIncorrectThe answer you gave is not a number.8.Question 8You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3, kbT=0.0259kbT=0.0259eVeV, and the charge on the electron is 1.6×10−191.6×10−19CC.Solve for Ec–EFEc–EFin eV, knowing that Eg=1.1Eg=1.1eVeV. Your answer should be in eV. For silicon, Nv=2.8×1019/cm3Nv=2.8×1019/cm3and Nc=1.04×1019/cm3Nc=1.04×1019/cm3.Note that Ec−Ev=EgEc−Ev=Eg.Do not enter units, just the number (5 sig figs).Status: [object Object]0 / 1 pointNo answerIncorrectThe answer you gave is not a number.9.Question 9You are given an ideal Si−SiO2Si−SiO2MOS capacitor with d=10d=10nmnmand NA=5×1017/cm3NA=5×1017/cm3at T = 300K. The intrinsic carrier concentration in intrinsic silicon is 1.5×1010/cm31.5×1010/cm3, kbT=0.0259kbT=0.0259eVeV, and the charge on the electron is 1.6×10−191.6×10−19CC.You want to bring about a strong depletion, where n=10×nin=10×ni. Evaluate expression for Ec–EfEc–Efin eV. For silicon, Nv=2.8×1019/cm3Nv=2.8×1019/cm3and Nc=1.04×1019/cm3Nc=1.04×1019/cm3.Do not enter units, just the number (5 sig figs).
Status: [object Object]0 / 1 pointNo answerIncorrectThe answer you gave is not a number.