EGRE 306 Homework 7: Circuit Design and Transistor Analysis
School
Virginia Commonwealth University**We aren't endorsed by this school
Course
EGRE 306
Subject
Electrical Engineering
Date
Dec 12, 2024
Pages
9
Uploaded by PrivateIceEmu11
EGRE 306 –Fall 2024 Homework #7; Due by on Saturday 10/12/24 on Gradescope by end of day Complete the following problems: 1.Problem 6.32 from the text
2.Problem 6.35 from the text
3.Problem 6.58 from the text
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4.Design the circuit below to establish IC =0.2 mA and VC= 0.5 V. The transistor exhibits vBEof 0.8 V at iC= 1 mA, and β=100.
5. Using the circuit below (= 150), a) Determine which region of operation the BJT is operating in, and find the voltages and currents: VC, VE, VB, IC, IB, IE. b) If the circuit is in the saturation region, calculate forced. c) Change the 500resistor so that the transistor is operating at the EDGE of saturation. What is the new resistor value?
6. Sketch the cross-section of an NMOS transistor, labeling the following regions/values: i) Source, gate, and drain contacts ii) Channel region iii) Label the doping types for all regions of the transistor iv) Indicate the voltages (polarities) at each contact that are needed to produce a current through the channel v) Indicate the direction of the current at the source, gate, and drain contacts **If the sketch is not easily read, you will not receive credit (neatness counts)**
7. An NMOS transistor (Vt= 0.5V, k'n = 400A/V2) with a channel length of 180nm and a channel width of 1.385m is used as a variable resistor with resistance between 250 and 1k. Specify the range required for the control voltage (VGS) –Show your work, explaining how you determined the range.